La memoria es un dispositivo semiconductor que se utiliza como dispositivo de almacenamiento de datos en un circuito integrado. Estos dispositivos están disponibles en varios formatos CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM y SRAM en no volátil o volátil. Los tamaños de memoria de estos dispositivos varían de 64 b a 6 Tb y la interfaz es I2C, MMC, Parallel, eMMC, Serial, Single Wire, SPI, UFS, Xccela Bus y 1-Wire.
| Parte # | Fabricante | Descripción | Disponibilidad | Precios | Cantidad |
|---|---|---|---|---|---|
K4S283233E-DN1LMemory ICs Products | SAMSUNG | En stock | - | ||
K4T1G084QE-HCF8Memory ICs Products | SAMSUNG | DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | 3071 | - | |
K4X2G323PC-8GD8Memory ICs Products | SAMSUNG | 29010 | - | ||
K5D1257ACC-D090Memory ICs Products | SAMSUNG | En stock | - | ||
K3QF1F10DM-BGCFMemory ICs Products | SAMSUNG | 1295 | - | ||
K4X51163PG-FGC6Memory ICs Products | SAMSUNG | 7781 | - | ||
K4S641632K-UI75Memory ICs Products | SAMSUNG | 961 | - | ||
K4S161622D-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | 7008 | - | |
K4M51163PEMemory ICs Products | SAMSUNG | 7012 | - | ||
K6R1008V1C-TC12Memory ICs Products | SAMSUNG | SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II | 8017 | - | |
K6R1008C1C-JC15Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | 9008 | - | |
K4J10324QD-HC12Memory ICs Products | SAMSUNG | DDR DRAM, 32MX32, 0.23ns, CMOS, PBGA136 | 11914 | - | |
K511H12ACM-B075Memory ICs Products | SAMSUNG | 2922 | - | ||
K4J52324QE-BJ1AMemory ICs Products | SAMSUNG | 4014 | - | ||
K4M561633G-BN75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54 | 52807 | - | |
K4F151611D-JC60Memory ICs Products | SAMSUNG | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | En stock | - | |
K4B1G1646G-BCMAMemory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96 | 16602 | - | |
K4N51163QE-ZC20Memory ICs Products | SAMSUNG | En stock | - | ||
K4S561632H-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | 1794 | - | |
K4T1G1640Q-HCE6Memory ICs Products | SAMSUNG | En stock | - | ||
K4M641633K-RN75Memory ICs Products | SAMSUNG | En stock | - | ||
K4H561638F-GCCCMemory ICs Products | SAMSUNG | DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin FBGA | En stock | - | |
K9F2808UOC-YCBOMemory ICs Products | SAMSUNG | 11820 | - | ||
K4A8G165WV-BCRCMemory ICs Products | SAMSUNG | DDR4-2400 512Mx16 (8Gb) | En stock | - | |
K9GBG08U0A-SCB0Memory ICs Products | SAMSUNG | 3002 | - |