La memoria es un dispositivo semiconductor que se utiliza como dispositivo de almacenamiento de datos en un circuito integrado. Estos dispositivos están disponibles en varios formatos CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM y SRAM en no volátil o volátil. Los tamaños de memoria de estos dispositivos varían de 64 b a 6 Tb y la interfaz es I2C, MMC, Parallel, eMMC, Serial, Single Wire, SPI, UFS, Xccela Bus y 1-Wire.
| Parte # | Fabricante | Descripción | Disponibilidad | Precios | Cantidad |
|---|---|---|---|---|---|
K6T1008C2C-GB70Memory ICs Products | SAMSUNG | 32P SOIC 32P SOIC | En stock | - | |
K4S641632H-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, | 23711 | - | |
K6R1016C1D-KI10Memory ICs Products | SAMSUNG | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | En stock | - | |
K6R4016C1D-UI10Memory ICs Products | SAMSUNG | SRAM Chip Async Single 5V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II | En stock | - | |
K4B4G0846B-HCK0Memory ICs Products | SAMSUNG | DDR DRAM, 512MX8, CMOS, PBGA78, FBGA-78 | 8220 | - | |
K6X4008T1F-VB70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32 | 2781 | - | |
K4D263238M-QC55Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.75ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | En stock | - | |
K4S641632F-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 1948 | - | |
K6R4008V1D-JC10Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 | 3641 | - | |
K4S643232H-TC50Memory ICs Products | SAMSUNG | 128 | - | ||
K7D803671B-HC30Memory ICs Products | SAMSUNG | DDR SRAM, 256KX36, 0.2ns, CMOS, PBGA153, 14 X 22 MM, BGA-153 | 404 | - | |
K6X4008C1F-GB55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32 | 49 | - | |
K4S643232H-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 8006 | - | |
K6X4008C1F-GB70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | 14723 | - | |
K4D26323QG-GC2AMemory ICs Products | SAMSUNG | En stock | - | ||
K4D263238K-VC40Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, | 11810 | - | |
K6T0808C1D-GF70Memory ICs Products | SAMSUNG | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28 | 10506 | - | |
K7B163635B-QC75Memory ICs Products | SAMSUNG | SRAM 512Kx36 | En stock | - | |
K6R4008V1C-JC15000Memory ICs Products | SAMSUNG | SRAM Chip Async Single 3.3V 4M-bit 512K x 8 15ns 36-Pin SOJ Tray | En stock | - | |
K6T1008C2E-RF70Memory ICs Products | SAMSUNG | En stock | - | ||
K5D1G572CM-D075Memory ICs Products | SAMSUNG | MCP 1G NAND/256M Mobile SDRAM | En stock | - | |
K4C561638C-TCD3Memory ICs Products | SAMSUNG | SD 16Mx16 Network DRAM | En stock | - | |
K5N1229ACC-BQ12Memory ICs Products | SAMSUNG | MCP 512Mb NOR/128Mb SRAM | En stock | - | |
KMQ5X000SA-B315Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 4445 | - | |
KA8520N00A-BWWWMemory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1291 | - |