La memoria es un dispositivo semiconductor que se utiliza como dispositivo de almacenamiento de datos en un circuito integrado. Estos dispositivos están disponibles en varios formatos CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM y SRAM en no volátil o volátil. Los tamaños de memoria de estos dispositivos varían de 64 b a 6 Tb y la interfaz es I2C, MMC, Parallel, eMMC, Serial, Single Wire, SPI, UFS, Xccela Bus y 1-Wire.
| Parte # | Fabricante | Descripción | Disponibilidad | Precios | Cantidad |
|---|---|---|---|---|---|
K6T4008C1C-GB70Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | En stock | - | |
K6T1008V2C-GF70Memory ICs Products | SAMSUNG | En stock | - | ||
K4S2816320-LC75Memory ICs Products | SAMSUNG | 8019 | - | ||
K4D263238E-GC36Memory ICs Products | SAMSUNG | SMT 50PCS/DRY Pack | 9009 | - | |
K6R1008V1D-KI10Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 10ns, CMOS, PDSO32 | 6014 | - | |
K7R163684B-FC20Memory ICs Products | SAMSUNG | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | 569 | - | |
K6T0808C1D-TB70Memory ICs Products | SAMSUNG | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 | En stock | - | |
K4S561632E-UC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | En stock | - | |
K6R1004V1D-JC10Memory ICs Products | SAMSUNG | Standard SRAM, 256KX4, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | En stock | - | |
K7R323682C-FC25Memory ICs Products | SAMSUNG | En stock | - | ||
K4D263238E-GC33Memory ICs Products | SAMSUNG | DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144 | 10501 | - | |
K9F1208U0C-PCB0Memory ICs Products | SAMSUNG | Flash, 64MX8, 30ns, PDSO48, TSOP1-48 | 1506 | - | |
K4S280832E-TC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 32004 | - | |
K6T2008U2A-YF70Memory ICs Products | SAMSUNG | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM | En stock | - | |
K4D28163HD-TC50Memory ICs Products | SAMSUNG | 2020 | - | ||
K4S641632N-LC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54 | 15009 | - | |
K4S641632H-TL75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 8521 | - | |
K4S641632H-UC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54 | 1514 | - | |
K9F5608U0C-PIB0Memory ICs Products | SAMSUNG | Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8 10us 48-Pin TSOP-I | En stock | - | |
K9K8G08U0E-SIB0Memory ICs Products | SAMSUNG | Flash, 1GX8, PDSO48, TSOP1-48 | 1820 | - | |
K6X8016T3B-UF55Memory ICs Products | SAMSUNG | Standard SRAM, 512KX16, 55ns, CMOS, PDSO44 | En stock | - | |
K9F5608U0D-FIB0Memory ICs Products | SAMSUNG | 32M x 8 Bit NAND Flash Memory | En stock | - | |
K9F2G08U0B-PIB0Memory ICs Products | SAMSUNG | SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I | En stock | - | |
KMQN1000SM-B316Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 130 | - | |
K7A803609B-HC20Memory ICs Products | SAMSUNG | SRAM 256Kx36-2 TQFP | En stock | - |